000 00417nam a2200145Ia 4500
008 241226s9999 xx 000 0 und d
020 _a978-81-205-1790-9
082 _a621.395
_bGAN
100 _aGandhi, S
245 0 _aVlsi febration principles:silicon and gaulliym arsenide
260 _aNew Delhi :
_bWiley India Pub,
_c2009.
300 _a834
365 _a449
650 _aElectrical Electronics Communication,
999 _c92870
_d92870